Semiconductor device having an expanded storage node contact and method for fabricating the same

ABSTRACT

A semiconductor device is disclosed that stably ensures an area of a storage node contact connected to a junction region in an active region of the semiconductor device and is thus able to improve the electrical properties of the semiconductor device and enhance a yield, and a method for fabricating the same. The semiconductor device includes a semiconductor substrate having an active region including a gate, a storage node contact region, and an isolation region that defines the active region. A passing gate and an isolation structure surrounding the passing gate are formed in the isolation region. A silicon epitaxial layer is selectively formed over an upper portion of the passing gate to expand the storage node contact region.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority to Korean patent applicationnumber 10-2008-0110123 filed on Nov. 6, 2008, which is incorporatedherein by reference in its entirety.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device and a method forfabricating the same, and more particularly, to a semiconductor devicethat stably ensures an area of a storage node contact connected to ajunction region in an active region of the semiconductor device and isthus able to improve the electrical properties of the semiconductordevice and enhance a yield, and a method for fabricating the same.

The size of a semiconductor wafer has continually increased due to thehigh integration of a semiconductor device and cost reduction. Inaddition, the size of a cell transistor is continually miniaturized toincrease the degree of integration of the semiconductor device.

The first step in achieving a higher degree of integration of asemiconductor device is the reduction of the critical dimension of acircuit pattern for the semiconductor device. It is also necessary toensure stable contact between a lower pattern and an upper pattern ofthe semiconductor device. This reduces a contact resistance between thelower pattern and the upper pattern and allows for a highly reliablesemiconductor device capable of operating at high speeds.

Meanwhile, when a design rule decreases according to the miniaturizationof a semiconductor device, the area of a storage node contact regionthat connects to a capacitor, i.e., a data storage with a junctionregion of a lower semiconductor substrate, is also reduced.

The reduction of the storage node contact region increases a resistanceagainst electric signal transfer and lowers a refresh property of thecell transistor due to the formation of an abnormal storage nodecontact. As a result, a yield is reduced and the operating speed of thesemiconductor device is lowered.

SUMMARY OF THE INVENTION

Embodiments of the present invention are directed to a semiconductordevice that stably ensures an area of a storage node contact connectedto a junction region in an active region, and is thus able to improveelectrical properties and enhance a yield and a method for fabricatingthe same.

In one embodiment of the present invention, a semiconductor devicecomprises a semiconductor substrate provided with an active regionprovided with a gate and a storage node contact region and an isolationregion defining the active region and formed therein with a passing gateand an isolation structure surrounding the passing gate; and a siliconepitaxial layer selectively formed over an upper portion of the passinggate so that the storage node contact region is expanded.

The gate and the passing gate are of an integrated type and formed in alinear shape, the gate is formed within the active region in pairs, andthe storage node contact region is disposed at an outside of the gate.

The passing gate is formed in the portion of the isolation regionlinearly extended from the gate.

The isolation structure is extended under the passing gate.

The portion of the isolation structure extended under the passing gatehas a thickness of 50 Å to 200 Å.

The isolation structure includes a linear insulation layer provided overthe side wall and bottom of the isolation region.

The linear insulation layer includes a stacked layer of an oxide layerand a nitride layer.

The passing gate has an upper surface of which height is lower than asurface of the active region.

The gate and the passing gate are provided an insulation layer on theuppermost portion thereof.

In another embodiment of the present invention, a method for fabricatinga semiconductor device comprises the steps of forming an insulation fordevice isolation in an isolation region of a semiconductor deviceprovided with an active region provided with a gate and a storage nodecontact region and the isolation region defining a passing gate regionand the active region; forming an isolation structure having a recess byremoving a portion of the insulation layer for device isolationcorresponding to the passing gate region; forming a gate and a passinggate over the gate region and within the recess of the passing gateregion, respectively; and selectively forming a silicon epitaxial layerover an upper portion of the passing gate so that the storage nodecontact region is expanded.

The gate and the passing gate are formed are of an integrated type andformed in a linear shape, the gate is formed within the active region inpairs, and the storage node contact region is disposed at an outside ofthe gate.

The passing gate region is formed in the portion of the isolation regionlinearly extended from the gate region.

The isolation structure is formed so that the insulation layer fordevice isolation is extended under the passing gate.

The portion of the isolation structure extended under the passing gateformed so as to be remained by a thickness of 50 Å to 200 Å.

The step of forming the insulation layer for device isolation includesthe steps of forming a trench in the isolation region; and forming alinear insulation layer over the side wall and bottom of the trench.

The linear insulation layer is formed of a stacked layer of an oxidelayer and a nitride layer.

The passing gate is formed so as to have an upper surface of whichheight is lower than a surface of the active region.

The step of forming the gate and the passing gate includes the steps offorming a conductive layer over the gate region and within the recessesof the passing gate region; forming an insulation layer over theconductive layer; forming a mask pattern that covers the gate region andthe passing gate region over the insulation layer; forming the gate andthe passing gate by etching the insulation layer and the conductivelayer; and removing the mask pattern.

The step of forming the gate and the passing gate may further includes,after the step of forming the conductive layer, a step of etching backthe conductive layer so that the height of the conductive layer in thepassing gate region is reduced.

The step of forming the gate and the passing gate further includes,after the step of forming the insulation layer, a step of etching backthe insulation layer so that the height of the insulation layer in thepassing gate region is reduced.

The step of forming the silicon epitaxial layer includes the steps of:forming a mask pattern, which selectively exposes an upper portion ofthe passing gate adjacent to the storage node contact region, over theactive region and the isolation region; forming the silicon epitaxiallayer over the exposed upper portion of the passing gate so that thestorage node contact region is expanded; and removing the mask pattern.

The mask pattern is formed of an oxide layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view showing a semiconductor device in accordance withan embodiment of the present invention.

FIG. 2 is a longitudinal-sectional view taken along the line X-X′ ofFIG. 1.

FIG. 3 is cross-sectional view taken along the line Y-Y′ of FIG. 1.

FIGS. 4A through 4K are views shown for illustrating the steps of amethod for fabricating a semiconductor device in accordance with anembodiment of the present invention.

DESCRIPTION OF SPECIFIC EMBODIMENTS

Hereinafter, preferred embodiments of the present invention will bedescribed in detail with reference to accompanying drawings.

FIG. 1 is a plan view showing a semiconductor device in accordance withan embodiment of the present invention; FIG. 2 is alongitudinal-sectional view taken along the line X-X′ of FIG. 1; andFIG. 3 is cross-sectional view taken along the line Y-Y′ of FIG. 1.

Referring to FIGS. 1 through 3, a semiconductor device 100 in accordancewith an embodiment of the present invention includes a silicon epitaxiallayer 190 formed on an upper portion of a passing gate 180 b of asemiconductor substrate 110. The semiconductor substrate 110 has anactive region 120 including a storage node contact region 122 and anisolation region 130 having the passing gate 180 b formed therein toexpand the storage node contact region 122.

The semiconductor substrate 110 has a gate forming region 140. The gateforming region 140 is divided into a gate region 142 and a passing gateregion 144 dependent on where the gate forming region 140 is positioned,i.e., in the active region 120 or the isolation region 130 respectively.A gate 180 a and the passing gate 180 b are formed in the gate region142 and the passing gate region 144 respectively. The gate 180 a andpassing gate 180 b are of an integrated type having a linear shape. Thegate 180 a and the passing gate 180 b are formed as a pair within eachactive region 120 and isolation region 130.

The active region 120 has a storage node contact region 122, which isconnected with a storage contact and formed with a junction region (notshown). The storage node contact region 122 is formed outside the gateregion, i.e., the storage node contact region 122 is a portion of theactive region 120 located between the isolation region 130 and the gateregion 142 of the active region 120. The gate region 142 is formed witha first recess R1. The gate region 142 including the first recess R1,which is formed in the active region 120, is formed to include the gate180 a having a conductive layer 182 a and an insulation layer 184 aformed on the conductive layer 182 a, or a hard mask layer formed of anitride layer.

The isolation region 130 is formed to define the active region 120 andincludes an isolation structure 160 formed of an insulation layer fordevice isolation. The isolation structure 160 includes a linearinsulation layer 150 formed at an interface of the active region 120 andthe isolation region 130. The linear insulation layer 150 is comprisedof a stacked layer having an oxide layer and a nitride layer, andpreferably, the linear insulation layer 150 includes a side wall oxidelayer 152, a linear nitride layer 154, and a linear oxide layer 156.

A portion of the isolation structure 160 that corresponds to the passinggate region 144 includes a second recess R2. The passing gate 180 bcomprises a conductive layer 182 b and an insulation layer 184 b or ahard mask layer formed of a nitride layer formed within the secondgroove R2. The passing gate 180 b is formed to a height such that anupper surface of the insulation layer 184 b is formed below the surfaceof the active region 120. The isolation structure 160 is formed tosurround the side wall of the passing gate 180 b and also extendsbeneath the passing gate 180 b in a thickness of 50 Å to 200 Å. Theportion of the isolation structure 160 that is extended beneath thepassing gate 180 b is not extended beneath the passing gate 180 b whenthe linear insulation layer 150 performs the electric insulationsmoothly. The isolation structure 160 may be provided at the interfacebetween the active region 120 and the isolation region 130 for electricinsulation.

On the upper portion of the passing gate 180 b provided in the isolationregion 130, i.e., an upper portion of the insulation layer 184 b, asilicon epitaxial layer 190 is selectively formed. The silicon epitaxiallayer 190 expands the surface area of the storage node contact region122 of the active region 120, i.e., the area of the storage node contactregion 122 formed with the junction region (not shown). As a result, thesemiconductor device 100 has an expanded storage node contact region 122a.

FIGS. 4A through 4K are views shown for illustrating the steps of amethod for fabricating a semiconductor device in accordance with anembodiment of the present invention.

Referring to FIGS. 4A and 4B, the semiconductor substrate 110 includesthe active region 120, which has a gate forming region 140 including thegate region 142 and the passing gate region 144. The gate region 142 andthe passing gate region 144 are disposed as a pair and have anintegrated type. A storage node contact region 122 is located outsidethe gate region 142. The isolation region 130 is also formed to definethe active region 120. An etching process is performed on thesemiconductor substrate 110 to form a trench T in the isolation region130.

The linear insulation layer 150 comprises a stacked layer structure ofan oxide layer and a nitride layer and is formed on the side walls andthe bottom of the trench T in the isolation region 130, as shown in FIG.4 b. Preferably, the linear insulation layer 150 is formed such that theside wall oxide layer 152 is formed first over the interior surface ofthe trench T by performing an oxidation process in a high temperaturefurnace for curing a surface of the trench T damaged by the etchingprocess. The linear nitride layer 154 and the linear oxide layer 156 arethen sequentially formed over the side wall oxide layer 152 to cure anyproblems due to a thermal expansion coefficient, stress, and adhesiveforce that are related to the formation of the isolation structure ofsubsequent processes.

The insulation layer 160 a for the device isolation is filled within thetrench T having the linear insulation layer 150. A Chemical MechanicalPolishing (CMP) process is then performed to thereby define the activeregion.

A mask pattern (not shown) that exposes the gate forming region 140 isthen formed over the semiconductor substrate 110. The gate region 142 ofthe active region 120 is then recessed according to an etching processto form the first recess R1 in the active region 120.

Referring to FIGS. 4C and 4D, a mask pattern 170 is formed over thesemiconductor substrate 100. The mask pattern 170 exposes only theportion of the insulation layer corresponding to the passing gate region144.

An etching process is performed on the exposed portion of the insulationlayer for the device isolation to form an isolation to structure 160. Asecond recess R2 is correspondingly formed in the passing gate region144. At this time, during the etching process, the linear oxide layer156 previously formed over the side wall of the isolation structure 160,is removed together with an oxide layer that forms the isolationstructure 160. The second recess R2 is formed so that the isolationstructure 160 remains having a thickness of 50 Å to 200 Å over theisolation region 130 as the electric insulation.

Referring to FIGS. 4E and 4F, after a gate insulation layer (not shown)is formed over the surface of the semiconductor substrate 110, a gateconductive layer and a gate hard mask layer, or an insulation layerformed of a nitride layer, are sequentially formed over thesemiconductor substrate 110 to fill the first recess R1 and the secondrecess R2. A mask pattern (not shown) that covers the gate formingregion 140 including the gate region 142 and the passing gate region 144is subsequently formed over the insulation layer. After the formation ofthe mask pattern, an etching process is performed and the mask patternis removed to form the gate 180 a and the passing gate 180 brespectively. The etching process etches the conductive layer 182 a, 182b and the insulation layer 184 a, 184 b to form the gate 180 a withinthe gate region 142 of the active region 120 and the passing gate 180 bwithin the passing gate region 144 of the isolation region 130.

The passing gate 180 b within the second recess R2 is formed to have aheight such than an upper surface of the insulation layer 184 b isformed below the surface of the active region 120. Where the conductivelayer 182 b is filled in the second recess R2 to a height greater thanthe required height when forming the conductive layer 182 b is formed inthe second recess due to the narrow width of the second recess R2, anetch back process may be performed to reduce the height of theconductive layer 182 b to the required height. Alternatively, where theheight of the conductive layer 182 b is too high, it is also possible toreduce the height of the conductive layer 182 b by performing an etchingprocess after forming a mask pattern that exposes only the portion ofthe conductive layer 182 b corresponding to the second recess R2. Whenforming the insulation layer 184 b in the second recess R2, it is alsopossible to reduce the height of the insulation layer 184 b using anetch back process or an etching process using a mask pattern similar tothe process for reducing the height of the conductive layer 182 b.

The linear insulation layer 150, which is formed in the trench T of theisolation region 130, located above the upper portion of the passinggate 180 b is removed when patterning for the formation of the passinggate 180 b is performed. As a result, the silicon on the side wallportion of the active region 120 above the passing gate 180 b providedin the second recess R2 is exposed.

Referring to FIGS. 4G and 4H, a mask pattern 186 formed to of an oxidelayer is formed over the active region 120 and the isolation region 130of the semiconductor substrate 110 to selectively expose an upperportion of the passing gate 180 b adjacent to the storage node contactregion 122.

A Silicon Epitaxial Growth (SEG) process is performed over the side wallportion of the exposed active region 120, i.e., the upper portion of theactive region 120 above the passing gate 180 b, to form a siliconepitaxial layer 190 so that the exposed storage node contact region 122is expanded.

Referring to FIGS. 4I and 4K, the mask pattern formed of the oxide layeris removed to complete the fabrication of the semiconductor devicehaving the expanded storage node contact 122 a in accordance with anembodiment of the present invention.

As is apparent from the above description, according to the presentinvention, the passing gate is formed within the isolation region to besurrounded by the isolation structure, and the silicon epitaxial layeris selectively formed over the upper portion of the passing gate by asilicon epitaxial process. Therefore, the area of the storage nodecontact region provided outside the gate in the active region isexpanded. Accordingly, although the size of the semiconductor device isreduced, it is possible to stably increase the junction area of thestorage node contact region provided in the active region. As a result,according to the present invention, it is possible to improve anoperation resistance of the semiconductor to device and improve arefresh characteristic.

Although specific embodiments of the present invention have beendescribed for illustrative purposes, those skilled in the art willappreciate that various modifications, additions and substitutions arepossible, without departing from the scope and the spirit of theinvention as disclosed in the accompanying claims.

What is claimed is:
 1. A method for fabricating a semiconductor device,comprising the steps of: forming an insulation layer for deviceisolation in an isolation region of a semiconductor device, thesemiconductor device having an active region including a gate region anda storage node contact region, and wherein the isolation region definesa passing gate region and the active region; forming an isolationstructure in the isolation region; forming a recess in the isolationstructure by removing a portion of the insulation layer for deviceisolation corresponding to the passing gate region; forming a gate and apassing gate in the gate region and within the recess of the passinggate region, respectively; and selectively forming a silicon epitaxiallayer on an upper portion of the passing gate adjacent to the storagenode contact region to expand the storage node contact region.
 2. Themethod according to claim 1, wherein the passing gate region is formedin a portion of the isolation region directly parallel to the gateregion.
 3. The method according to claim 1, wherein the isolationstructure is formed such that a portion of the insulation layer fordevice isolation is extended below the passing gate.
 4. The methodaccording to claim 3, wherein the portion of the isolation structureextended below the passing gate is formed to have a thickness in therange of 50Å to 200Å.
 5. The method according to claim 1, wherein thestep of forming the insulation layer for device isolation includes thesteps of: forming a trench in the isolation region; and forming a linearinsulation layer over a bottom and side walls of the trench formed inthe isolation region.
 6. The method according to claim 5, wherein thelinear insulation layer is formed of a stacked layer comprising an oxidelayer and a nitride layer.
 7. The method according to claim 1, whereinthe passing gate is formed to a height such that an upper surface of thepassing gate is below an upper surface of the active region.
 8. Themethod according to claim 1, wherein the step of forming the gate andthe passing gate includes the steps of: forming a conductive layer overthe gate region and within the recess of the passing gate region;forming an insulation layer over the conductive layer formed over thegate region and within the recess of the passing gate region; forming amask pattern over the insulation layer that covers the gate region andthe passing gate region; forming the gate and the passing gate byetching the insulation layer and the conductive layer not covered by themask pattern; and removing the mask pattern.
 9. The method according toclaim 8, wherein the step of forming the gate and the passing gatefurther includes, after the step of forming the conductive layer, a stepof etching back the conductive layer to reduce a height of theconductive layer in the passing gate region.
 10. The method according toclaim 8, wherein the step of forming the gate and the passing gatefurther includes, after the step of forming the insulation layer, a stepof etching back the insulation layer to reduce a height of theinsulation layer in the passing gate region.
 11. The method according toclaim 1, wherein the step of selectively forming the silicon epitaxiallayer includes the steps of: forming a mask pattern over the activeregion and the isolation region that selectively exposes the upperportion of the passing gate adjacent to the storage node contact region;performing growth process of the silicon epitaxial layer over theexposed upper portion of the passing gate; and removing the maskpattern.
 12. The method according to claim 11, wherein the mask patternis formed of an oxide layer.